Shimura, Takayoshi: шукати на сайті Z-Library

Рік:

2011

Мова:

english

Файл:

PDF, 952 KB

english, 2011

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Watanabe, Heiji, Kirino, Takashi, Kagei, Yusuke, Harries, James, Yoshigoe, Akitaka, Teraoka, Yuden, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Shimura, Takayoshi

Журнал:

Рік:

2011

Мова:

english

Файл:

PDF, 421 KB

english, 2011

Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces

Kagei, Yusuke, Kirino, Takashi, Watanabe, Yuu, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Tatsumura, Kosuke, Watanabe, Takanobu, Yamasaki, Daisuke, Shimura, Takayoshi, Umeno, Masataka, Ohdomari, Iwao

Рік:

2010

Мова:

english

Файл:

PDF, 868 KB

english, 2010

Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide

Журнал:

Japanese Journal of Applied Physics

Рік:

2003

Файл:

PDF, 399 KB

2003

Analysis of X-ray diffraction curves of trapezoidal Si nanowires with a strain distribution

Takeuchi, Teruaki, Tatsumura, Kosuke, Shimura, Takayoshi, Ohdomari, Iwao

Журнал:

Thin Solid Films

Рік:

2016

Мова:

english

Файл:

PDF, 1.79 MB

english, 2016

Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices

Katsu, Yoshihito, Hosoi, Takuji, Nanen, Yuichiro, Kimoto, Tsunenobu, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Japanese Journal of Applied Physics

Рік:

2016

Мова:

english

Файл:

PDF, 336 KB

english, 2016

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET

Hosoi, Takuji, Azumo, Shuji, Kashiwagi, Yusaku, Hosaka, Shigetoshi, Yamamoto, Kenji, Aketa, Masatoshi, Asahara, Hirokazu, Nakamura, Takashi, Kimoto, Tsunenobu, Shimura, Takayoshi, Watanabe, Heiji

Рік:

2017

Файл:

PDF, 848 KB

2017

Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)

Sometani, Mitsuru, Nagai, Daisuke, Katsu, Yoshihito, Hosoi, Takuji, Shimura, Takayoshi, Takei, Manabu, Yonezawa, Yoshiyuki, Watanabe, Heiji

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 699 KB

english, 2017

Sub-nanometer-scale depth profiling of nitrogen atoms in SiO 2 /4H-SiC structures treated with NO annealing

Moges, Kidist, Sometani, Mitsuru, Hosoi, Takuji, Shimura, Takayoshi, Harada, Shinsuke, Watanabe, Heiji

Журнал:

Applied Physics Express

Рік:

2018

Мова:

english

Файл:

PDF, 721 KB

english, 2018

Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling

Sometani, Mitsuru, Katsu, Yoshihito, Nagai, Daisuke, Tsuji, Hidenori, Hosoi, Takuji, Shimura, Takayoshi, Yonezawa, Yoshiyuki, Watanabe, Heiji

Журнал:

Japanese Journal of Applied Physics

Рік:

2018

Мова:

english

Файл:

PDF, 902 KB

english, 2018

Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET

Takeda, Hironori, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Moges, Kidist, Sometani, Mitsuru, Hosoi, Takuji, Shimura, Takayoshi, Harada, Shinsuke, Watanabe, Heiji

Рік:

2019

Мова:

english

Файл:

PDF, 484 KB

english, 2019

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

Журнал:

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Рік:

2019

Файл:

PDF, 995 KB

2019

Nitrogen plasma cleaning of Ge(1 0 0) surfaces

Журнал:

Applied Surface Science

Рік:

2009

Мова:

english

Файл:

PDF, 534 KB

english, 2009

Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

Hiroaki Arimura, Shinya Horie, Yudai Oku, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Журнал:

Applied Surface Science

Рік:

2008

Мова:

english

Файл:

PDF, 431 KB

english, 2008

Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Журнал:

Journal of Crystal Growth

Рік:

2008

Мова:

english

Файл:

PDF, 459 KB

english, 2008

X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections

Teruaki Takeuchi, Kosuke Tatsumura, Iwao Ohdomari, Takayoshi Shimura, Masao Nagase

Журнал:

Physica B: Condensed Matter

Рік:

2011

Мова:

english

Файл:

PDF, 837 KB

english, 2011

Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

Shiniti Yoshida, Yasumasa Watanabe, Yuuki Kita, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Keisaku Yamada

Журнал:

Science and Technology of Advanced Materials

Рік:

2007

Мова:

english

Файл:

PDF, 579 KB

english, 2007

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Журнал:

Science and Technology of Advanced Materials

Рік:

2007

Мова:

english

Файл:

PDF, 667 KB

english, 2007

Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing

Takayoshi Shimura, Takuji Hosoi, Kazunori Fukuda, Masataka Umeno, Atsushi Ogura

Журнал:

Journal of Crystal Growth

Рік:

2002

Мова:

english

Файл:

PDF, 136 KB

english, 2002

Selective epitaxial growth of in situ carbon-doped silicon on silicon substrates

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Журнал:

Surface and Interface Analysis

Рік:

2008

Мова:

english

Файл:

PDF, 629 KB

english, 2008

Characterization of strained Si wafers by X-ray diffraction techniques

Takayoshi Shimura, Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi Yasutake, Atsushi Ogura, Kazunori Fukuda, Osami Sakata, Shigeru Kimura, Hiroki Edo, Satoshi Iida, Masataka Umeno

Журнал:

Journal of Materials Science: Materials in Electronics

Рік:

2008

Мова:

english

Файл:

PDF, 503 KB

english, 2008

Identification of SNF2h, a Chromatin-Remodeling Factor, as a Novel Binding Protein of Vpr of Human Immunodeficiency Virus Type 1

Taneichi, Daiki, Iijima, Kenta, Doi, Akihiro, Koyama, Takayoshi, Minemoto, Yuzuru, Tokunaga, Kenzo, Shimura, Mari, Kano, Shigeyuki, Ishizaka, Yukihito

Журнал:

Journal of Neuroimmune Pharmacology

Рік:

2011

Мова:

english

Файл:

PDF, 445 KB

english, 2011

Characterization of the (0001) surface of ice Ih crystal by crystal truncation rod scattering with the use of a synchrotron radiation source

Akira Goto, Kazuhiro Akiya, Takeo Hondoh, Yoshinori Furukawa, Takayoshi Shimura, Isao Takahashi, Jimpei Harada

Журнал:

Journal of Crystal Growth

Рік:

1992

Мова:

english

Файл:

PDF, 410 KB

english, 1992

Evaluation of selective tumor detection by clinical magnetic resonance imaging using antibody-conjugated superparamagnetic iron oxide

Takayoshi Koyama, Mari Shimura, Yuzuru Minemoto, Satoshi Nohara, Sayaka Shibata, Yutaka Iida, Shinki Iwashita, Masakatsu Hasegawa, Tohru Kurabayashi, Hirofumi Hamada, Kenji Kono, Eiichi Honda, Ichio A

Журнал:

Journal of Controlled Release

Рік:

2012

Мова:

english

Файл:

PDF, 628 KB

english, 2012

Segmented photorefractive waveguides in LiNbO 3 :Fe

Matoba, Osamu, Inujima, Takayoshi, Shimura, Tsutomu, Kuroda, Kazuo

Журнал:

Journal of the Optical Society of America B

Рік:

1998

Мова:

english

Файл:

PDF, 558 KB

english, 1998

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Hosoi, Takuji, Kutsuki, Katsuhiro, Okamoto, Gaku, Saito, Marina, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Рік:

2009

Мова:

english

Файл:

PDF, 634 KB

english, 2009

Structure of silicon oxide on Si(001) grown at low temperatures

Isao Takahashi, Kouki Nakano, Jimpei Harada, Takayoshi Shimura, Masataka Umeno

Журнал:

Surface Science

Рік:

1994

Мова:

english

Файл:

PDF, 372 KB

english, 1994

Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure

Tagawa, Masahito, Sogo, Chie, Yokota, Kumiko, Yoshigoe, Akitaka, Teraoka, Yuden, Shimura, Takayoshi

Журнал:

Journal of the American College of Cardiology

Рік:

2006

Мова:

english

Файл:

PDF, 486 KB

english, 2006

TCT-252 Impact of pre-diabetic status on coronary atherosclerosis: a multi-vessel angioscopic study

Osamu Kurihara, Masanori Yamamoto, Chikao Ibuki, Toru Inami, Nakahisa Kimata, Nobuaki Kobayashi, Kyoichi Mizuno, Ryo Munakata, Daisuke Murakami, Takayoshi Ohba, Yoshihiko Seino, Tetsurou Shimura, Masa

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 57 KB

english, 2012

Electrical detection of surface plasmon resonance phenomena by a photoelectronic device integrated with gold nanoparticle plasmon antenna

Hashimoto, Tatsuya, Fukunishi, Yurie, Zheng, Bin, Uraoka, Yukiharu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Watanabe, Heiji, Kutsuki, Katsuhiro, Hideshima, Iori, Okamoto, Gaku, Hosoi, Takuji, Shimura, Takayoshi

Рік:

2013

Мова:

english

Файл:

PDF, 1.16 MB

english, 2013

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)

Журнал:

Key Engineering Materials

Рік:

2011

Мова:

english

Файл:

PDF, 398 KB

english, 2011

Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures

Chanthaphan, Atthawut, Hosoi, Takuji, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 906 KB

english, 2012

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

Kozono, Kohei, Hosoi, Takuji, Kagei, Yusuke, Kirino, Takashi, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Рік:

2010

Мова:

english

Файл:

PDF, 406 KB

english, 2010

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

Hosoi, Takuji, Kirino, Takashi, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Cancer Chemotherapy and Pharmacology

Рік:

2012

Мова:

english

Файл:

PDF, 601 KB

english, 2012

Randomized controlled study of gemcitabine plus S-1 combination chemotherapy versus gemcitabine for unresectable pancreatic cancer

Sudo, Kentaro, Ishihara, Takeshi, Hirata, Nobuto, Ozawa, Fumiaki, Ohshima, Tadashi, Azemoto, Ryosaku, Shimura, Kenji, Nihei, Takeshi, Nishino, Takayoshi, Nakagawa, Akihiko, Nakamura, Kazuyoshi, Hara,

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 288 KB

english, 2014

Stabilization control for a mass spectrometer

Hosoi, Takuji, Hideshima, Iori, Tanaka, Ryohei, Minoura, Yuya, Yoshigoe, Akitaka, Teraoka, Yuden, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Spectrochimica Acta Part B: Atomic Spectroscopy

Рік:

1984

Мова:

english

Файл:

PDF, 97 KB

english, 1984

Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji, Hideshima, Iori, Tanaka, Ryohei, Minoura, Yuya, Yoshigoe, Akitaka, Teraoka, Yuden, Shimura, Takayoshi, Watanabe, Heiji

Журнал:

Microelectronic Engineering

Рік:

2013

Мова:

english

Файл:

PDF, 729 KB

english, 2013

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Watanabe, Heiji, Kutsuki, Katsuhiro, Kasuya, Atsushi, Hideshima, Iori, Okamoto, Gaku, Saito, Shoichiro, Ono, Tomoya, Hosoi, Takuji, Shimura, Takayoshi

Журнал:

Hideshima, Iori, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

Рік:

2012

Мова:

english

Файл:

PDF, 1.98 MB

english, 2012

Al2O3/GeO2 stacked gate dielectrics formed by post-deposition oxidation of ultrathin metal Al layer directly grown on Ge substrates

Журнал:

Kitano, Naomu, Chikaraishi, Keisuke, Arimura, Hiroaki, Hosoi, Takuji, Shimura, Takayoshi, Nakagawa, Takashi, Watanabe, Heiji

Рік:

2012

Мова:

english

Файл:

PDF, 854 KB

english, 2012

Effective work function control of metal inserted poly-Si electrodes on HfSiO dielectrics by in-situ oxygen treatment of metal surface

Журнал:

Shimura, Takayoshi, Okamoto, Yuki, Shimokawa, Daisuke, Inoue, Tomoyuki, Hosoi, Takuji, Watanabe, Heiji

Рік:

2012

Мова:

english

Файл:

PDF, 762 KB

english, 2012

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Interface Reaction and Rate Enhancement of SiGe Thermal Oxidation

Рік:

2010

Мова:

english

Файл:

PDF, 402 KB

english, 2010

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

Hosoi, Takuji, Kirino, Takashi, Chanthaphan, Atthawut, Uenishi, Yusuke, Ikeguchi, Daisuke, Yoshigoe, Akitaka, Teraoka, Yuden, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watan

Журнал: